Infineon HEXFET N-Channel MOSFET, 100 A, 25 V, 8-Pin PQFN 5 x 6 IRFH5250DTRPBF

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RS-artikelnummer:
130-0979
Tillv. art.nr:
IRFH5250DTRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Package Type

PQFN 5 x 6

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

156 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Length

6mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

83 nC @ 10 V

Number of Elements per Chip

1

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

Height

0.85mm

N-Channel Power MOSFET 12V to 25V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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