Infineon HEXFET Type N-Channel MOSFET, 21 A, 25 V, 6-Pin PQFN

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10 884,00 kr

(exkl. moms)

13 604,00 kr

(inkl. moms)

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  • Dessutom levereras 4 000 enhet(er) från den 19 januari 2026
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4000 - 40002,721 kr10 884,00 kr
8000 +2,395 kr9 580,00 kr

*vägledande pris

RS-artikelnummer:
257-5535
Tillv. art.nr:
IRFHS8242TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

25V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

13mΩ

Typical Gate Charge Qg @ Vgs

4.3nC

Maximum Power Dissipation Pd

2.1W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Height

0.9mm

Width

2 mm

Length

2mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Low RDSon (< 58 m)

Low thermal resistance to PCB (<12°C/W)

100% Rg tested

Low profile (<09 mm)

Industry-standard pinout

Compatible with existing surface mount techniques

RoHS compliant containing no lead, no bromide and no halogen environmentally

MSL1, industrial qualification

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