Infineon Dual HEXFET 2 Type N-Channel MOSFET, 9.1 A, 30 V Enhancement, 8-Pin SOIC IRF7907TRPBF
- RS-artikelnummer:
- 130-0964
- Tillv. art.nr:
- IRF7907TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
78,17 kr
(exkl. moms)
97,71 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 4 210 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 7,817 kr | 78,17 kr |
| 50 - 90 | 7,428 kr | 74,28 kr |
| 100 - 240 | 5,869 kr | 58,69 kr |
| 250 - 490 | 4,086 kr | 40,86 kr |
| 500 + | 3,996 kr | 39,96 kr |
*vägledande pris
- RS-artikelnummer:
- 130-0964
- Tillv. art.nr:
- IRF7907TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-36-987 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Width 4 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Distrelec Product Id 304-36-987 | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
relaterade länkar
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRL6372TRPBF
- Infineon Dual HEXFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon Dual HEXFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRF9362TRPBF
- Infineon HEXFET Dual N-Channel MOSFET 30 V, 8-Pin SOIC IRF8313TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC