Infineon Dual HEXFET 2 Type N-Channel MOSFET, 8.1 A, 30 V Enhancement, 8-Pin SOIC IRL6372TRPBF
- RS-artikelnummer:
- 130-1013
- Tillv. art.nr:
- IRL6372TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
104,525 kr
(exkl. moms)
130,65 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 15 200 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 100 | 4,181 kr | 104,53 kr |
| 125 - 225 | 3,346 kr | 83,65 kr |
| 250 - 600 | 3,132 kr | 78,30 kr |
| 625 - 1225 | 2,885 kr | 72,13 kr |
| 1250 + | 2,814 kr | 70,35 kr |
*vägledande pris
- RS-artikelnummer:
- 130-1013
- Tillv. art.nr:
- IRL6372TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 2 | |
| Distrelec Product Id | 304-36-992 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4 mm | ||
Number of Elements per Chip 2 | ||
Distrelec Product Id 304-36-992 | ||
Automotive Standard No | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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