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Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220

RS-artikelnummer:: 124-9000
Tillv. art.nr:: IRF3205ZPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220

Mängdrabatt möjlig

Antal (1 rör med 50 enheter)*

649,60 kr

(exkl. moms)

812,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 600 enhet(er) från den 29 december 2025

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Enheter	Per enhet	Per Rør*
50 - 50	12,992 kr	649,60 kr
100 - 200	10,524 kr	526,20 kr
250 - 450	9,874 kr	493,70 kr
500 - 950	9,224 kr	461,20 kr
1000 +	8,575 kr	428,75 kr

*vägledande pris

RS-artikelnummer:: 124-9000
Tillv. art.nr:: IRF3205ZPBF
Tillverkare / varumärke:: Infineon

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Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	110A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	7mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	76nC
	Maximum Power Dissipation Pd	170W
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Standards/Approvals	No
	Width	4.69 mm
	Length	10.54mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 110A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 7mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 76nC
	Maximum Power Dissipation Pd 170W
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Standards/Approvals No
	Width 4.69 mm
	Length 10.54mm
	Automotive Standard No

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COO (Country of Origin):: MX

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