DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 6.6 A, 60 V Enhancement, 8-Pin SOIC
- RS-artikelnummer:
- 121-9628
- Tillv. art.nr:
- DMN6040SSD-13
- Tillverkare / varumärke:
- DiodesZetex
Antal (1 rulle med 2500 enheter)*
5 005,00 kr
(exkl. moms)
6 255,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 7 500 enhet(er) från den 29 december 2025
- Dessutom levereras 85 000 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 2,002 kr | 5 005,00 kr |
*vägledande pris
- RS-artikelnummer:
- 121-9628
- Tillv. art.nr:
- DMN6040SSD-13
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 6.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 10.4nC | |
| Minimum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | MIL-STD-202, RoHS, J-STD-020, UL 94V-0, AEC-Q101 | |
| Length | 4.95mm | |
| Height | 1.5mm | |
| Width | 3.95 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 6.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 10.4nC | ||
Minimum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals MIL-STD-202, RoHS, J-STD-020, UL 94V-0, AEC-Q101 | ||
Length 4.95mm | ||
Height 1.5mm | ||
Width 3.95 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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