onsemi UniFET Type N-Channel MOSFET, 680 mA, 25 V Enhancement, 3-Pin SOT-23 FDV303N
- RS-artikelnummer:
- 121-2747
- Tillv. art.nr:
- FDV303N
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 100 enheter)*
103,90 kr
(exkl. moms)
129,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 4 400 enhet(er) från den 29 december 2025
- Dessutom levereras 16 700 enhet(er) från den 05 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 100 - 400 | 1,039 kr | 103,90 kr |
| 500 - 900 | 0,895 kr | 89,50 kr |
| 1000 + | 0,777 kr | 77,70 kr |
*vägledande pris
- RS-artikelnummer:
- 121-2747
- Tillv. art.nr:
- FDV303N
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-23 | |
| Series | UniFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.6V | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.64nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.93mm | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Distrelec Product Id | 304-36-911 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-23 | ||
Series UniFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.6V | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.64nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.93mm | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Distrelec Product Id 304-36-911 | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
relaterade länkar
- onsemi UniFET Type N-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23
- onsemi UniFET Type P-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23
- onsemi UniFET Type P-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23 FDV304P
- onsemi Isolated 2 Type N-Channel Power MOSFET 25 V Enhancement, 6-Pin SOT-23
- onsemi Isolated 2 Type N-Channel Power MOSFET 25 V Enhancement, 6-Pin SOT-23 FDC6303N
- onsemi Isolated 2 Type P 680 mA 6-Pin SOT-23
- onsemi Isolated 2 Type P 680 mA 6-Pin SOT-23 FDC6321C
- onsemi UniFET Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-3PN