onsemi UniFET Type P-Channel MOSFET, 460 mA, 25 V Enhancement, 3-Pin SOT-23
- RS-artikelnummer:
- 166-1711
- Tillv. art.nr:
- FDV304P
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 rulle med 3000 enheter)*
2 781,00 kr
(exkl. moms)
3 477,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 27 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 - 3000 | 0,927 kr | 2 781,00 kr |
| 6000 + | 0,872 kr | 2 616,00 kr |
*vägledande pris
- RS-artikelnummer:
- 166-1711
- Tillv. art.nr:
- FDV304P
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 460mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-23 | |
| Series | UniFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Height | 0.93mm | |
| Length | 2.92mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 460mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-23 | ||
Series UniFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Height 0.93mm | ||
Length 2.92mm | ||
Automotive Standard No | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
relaterade länkar
- onsemi UniFET Type P-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23 FDV304P
- onsemi UniFET Type N-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23
- onsemi UniFET Type N-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23 FDV303N
- onsemi Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 NTR4101PT1G
- onsemi Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- onsemi Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- onsemi Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- onsemi Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
