STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-220 STF35N60DM2
- RS-artikelnummer:
- 111-6464
- Tillv. art.nr:
- STF35N60DM2
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
69,89 kr
(exkl. moms)
87,362 kr
(inkl. moms)
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- Dessutom levereras 234 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 34,945 kr | 69,89 kr |
| 10 - 98 | 34,05 kr | 68,10 kr |
| 100 - 498 | 33,15 kr | 66,30 kr |
| 500 + | 32,37 kr | 64,74 kr |
*vägledande pris
- RS-artikelnummer:
- 111-6464
- Tillv. art.nr:
- STF35N60DM2
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | MDmesh DM2 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 40W | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Height | 16.4mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series MDmesh DM2 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 40W | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Height 16.4mm | ||
Automotive Standard No | ||
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
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