Infineon Isolated OptiMOS™ 2 Type N, Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 6-Pin TSOP-6 BSL316CH6327XTSA1

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164,52 kr

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205,68 kr

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RS-artikelnummer:
110-7129
Tillv. art.nr:
BSL316CH6327XTSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

1.5A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS™

Package Type

TSOP-6

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

500mW

Typical Gate Charge Qg @ Vgs

2.4nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.86V

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Height

1mm

Width

1.6 mm

Length

2.9mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Distrelec Product Id

304-36-975

Infineon OptiMOS™ Dual Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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