Vishay SI3122DV Type N-Channel Single MOSFETs, 1.95 A, 100 V Enhancement, 6-Pin PowerPAK SI3122DV-T1-GE3

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6 345,00 kr

(exkl. moms)

7 932,00 kr

(inkl. moms)

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  • Dessutom levereras 6 000 enhet(er) från den 29 december 2025
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3000 +2,115 kr6 345,00 kr

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RS-artikelnummer:
653-088
Tillv. art.nr:
SI3122DV-T1-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

1.95A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK

Series

SI3122DV

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.160Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

2.9nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

1.34W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.1mm

Width

2.98 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in a TSOP-6 format, it utilizes TrenchFET Gen IV technology to deliver low RDS(on), fast switching, and efficient thermal performance in space-constrained designs.

Pb Free

Halogen free

RoHS compliant

Used in LED backlighting

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