onsemi NTT Type N-Channel Single MOSFETs, 178 A, 40 V Enhancement, 8-Pin WDFN8 NTTFS1D4N04XMTAG
- RS-artikelnummer:
- 648-510
- Tillv. art.nr:
- NTTFS1D4N04XMTAG
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 längd med 5 enheter)*
73,25 kr
(exkl. moms)
91,55 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 25 juni 2026
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Enheter | Per enhet | Per Längd* |
|---|---|---|
| 5 - 45 | 14,65 kr | 73,25 kr |
| 50 - 245 | 9,094 kr | 45,47 kr |
| 250 - 495 | 5,264 kr | 26,32 kr |
| 500 + | 5,13 kr | 25,65 kr |
*vägledande pris
- RS-artikelnummer:
- 648-510
- Tillv. art.nr:
- NTTFS1D4N04XMTAG
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 178A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTT | |
| Package Type | WDFN8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.43mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Typical Gate Charge Qg @ Vgs | 35.4nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.3 mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 178A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTT | ||
Package Type WDFN8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.43mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Typical Gate Charge Qg @ Vgs 35.4nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Width 3.3 mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in applications.
Low RDS(on)
Low Capacitance
Small Footprint
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