onsemi NVM Type N-Channel Single MOSFETs, 94 A, 40 V Enhancement, 5-Pin DFNW-5 NVMFWS2D9N04XMT1G
- RS-artikelnummer:
- 648-509
- Tillv. art.nr:
- NVMFWS2D9N04XMT1G
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 längd med 10 enheter)*
116,37 kr
(exkl. moms)
145,46 kr
(inkl. moms)
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- 300 enhet(er) är redo att levereras
- Dessutom levereras 1 500 enhet(er) från den 29 april 2026
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Enheter | Per enhet | Per Längd* |
|---|---|---|
| 10 - 90 | 11,637 kr | 116,37 kr |
| 100 - 490 | 7,202 kr | 72,02 kr |
| 500 - 990 | 4,424 kr | 44,24 kr |
| 1000 + | 4,312 kr | 43,12 kr |
*vägledande pris
- RS-artikelnummer:
- 648-509
- Tillv. art.nr:
- NVMFWS2D9N04XMT1G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 94A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVM | |
| Package Type | DFNW-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 15.7nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Length | 4.9mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Width | 5.90 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 94A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVM | ||
Package Type DFNW-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 15.7nC | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Length 4.9mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Width 5.90 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Small Footprint
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
RoHS Compliant
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