Specifikationer

Datablad

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Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	58A
	Maximum Drain Source Voltage Vds	1200V
	Series	NTT
	Package Type	WDFN
	Mount Type	Through Hole
	Pin Count	8
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	13nC
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Power Dissipation Pd	117W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 58A
	Maximum Drain Source Voltage Vds 1200V
	Series NTT
	Package Type WDFN
	Mount Type Through Hole
	Pin Count 8
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 13nC
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Power Dissipation Pd 117W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - NTTFS012N10MDTAG

The ON Semiconductor MOSFET used as Primary switch in isolated DC−DC converter, Synchronous Rectification (SR) in DC−DC and AC−DC, AC−DC Adapters (USB PD) SR, Load Switch, Hotswap and O-ring Switch, BLDC Motor and Solar Inverter.

Shielded Gate MOSFET Technology

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

Low QRR, Soft Recovery Body Diode

Low QOSS to Improve Light Load Efficiency

These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant

onsemi NTT Type N-Channel MOSFET, 58 A, 1200 V N, 8-Pin WDFN

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