onsemi NTT Type N-Channel MOSFET, 58 A, 1200 V N, 8-Pin WDFN NTTFS012N10MDTAG
- RS-artikelnummer:
- 244-9189
- Tillv. art.nr:
- NTTFS012N10MDTAG
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
109,42 kr
(exkl. moms)
136,775 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 1 310 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 21,884 kr | 109,42 kr |
| 50 - 95 | 18,86 kr | 94,30 kr |
| 100 - 495 | 16,352 kr | 81,76 kr |
| 500 - 995 | 14,38 kr | 71,90 kr |
| 1000 + | 13,082 kr | 65,41 kr |
*vägledande pris
- RS-artikelnummer:
- 244-9189
- Tillv. art.nr:
- NTTFS012N10MDTAG
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTT | |
| Package Type | WDFN | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 117W | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTT | ||
Package Type WDFN | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 117W | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET used as Primary switch in isolated DC−DC converter, Synchronous Rectification (SR) in DC−DC and AC−DC, AC−DC Adapters (USB PD) SR, Load Switch, Hotswap and O-ring Switch, BLDC Motor and Solar Inverter.
Shielded Gate MOSFET Technology
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Low QRR, Soft Recovery Body Diode
Low QOSS to Improve Light Load Efficiency
These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant
relaterade länkar
- onsemi NTT Type N-Channel MOSFET 1200 V N, 8-Pin WDFN
- onsemi NTM Type N-Channel MOSFET 1200 V N, 5-Pin DFN
- onsemi NTM Type N-Channel MOSFET 1200 V N, 5-Pin DFN NTMFS5C645NT1G
- onsemi NTM Type N-Channel MOSFET 1200 V N, 5-Pin DFN NTMFS6H824NT1G
- onsemi NTM Type N-Channel MOSFET 1200 V N, 5-Pin DFN-5
- onsemi NTM Type N-Channel MOSFET 1200 V N, 5-Pin DFN-5 NTMFS3D2N10MDT1G
- onsemi NTHL Type N-Channel MOSFET 1200 V, 5-Pin TO-247
- onsemi NTD Type N-Channel MOSFET 1200 V, 5-Pin TO-252
