ROHM RD3 Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 RD3L04BBLHRBTL
- RS-artikelnummer:
- 646-545
- Tillv. art.nr:
- RD3L04BBLHRBTL
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 längd med 10 enheter)*
84,11 kr
(exkl. moms)
105,14 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 100 enhet(er) från den 19 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Längd* |
|---|---|---|
| 10 - 90 | 8,411 kr | 84,11 kr |
| 100 - 490 | 7,403 kr | 74,03 kr |
| 500 - 990 | 6,642 kr | 66,42 kr |
| 1000 + | 5,253 kr | 52,53 kr |
*vägledande pris
- RS-artikelnummer:
- 646-545
- Tillv. art.nr:
- RD3L04BBLHRBTL
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12.1nC | |
| Maximum Power Dissipation Pd | 53W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.8 mm | |
| Length | 10.50mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12.1nC | ||
Maximum Power Dissipation Pd 53W | ||
Maximum Operating Temperature 175°C | ||
Width 6.8 mm | ||
Length 10.50mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel 60 volt 40 ampere power metal oxide semiconductor field effect transistor features lead free plating and is restriction of hazardous substances compliant. It is one hundred percent avalanche tested.
Low on-resistance
AEC-Q101 qualified
relaterade länkar
- ROHM RD3 Type P-Channel Single MOSFETs 3-Pin TO-252 RD3L03BBJHRBTL
- ROHM RD3 Type N-Channel Single MOSFETs 3-Pin TO-252 RD3P04BBKHRBTL
- ROHM RD3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 RD3L04BBKHRBTL
- ROHM RD3 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 RD3G08CBKHRBTL
- ROHM RD3 Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 RD3G08BBJHRBTL
- ROHM AG091FLD3HRB Type N-Channel Single MOSFETs 3-Pin TO-252 (TL) AG091FLD3HRBTL
- ROHM RD3L08DBKHRB Type N-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3L08DBKHRBTL
- ROHM RD3L08DBLHRB Type N-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3L08DBLHRBTL
