Microchip DN2470 Type N-Channel RF MOSFET, 170 mA, 700 V Depletion, 3-Pin TO-252 DN2470K4-G

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30 092,00 kr

(exkl. moms)

37 616,00 kr

(inkl. moms)

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RS-artikelnummer:
598-941
Tillv. art.nr:
DN2470K4-G
Tillverkare / varumärke:
Microchip
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Brand

Microchip

Channel Type

Type N

Product Type

RF MOSFET

Maximum Continuous Drain Current Id

170mA

Maximum Drain Source Voltage Vds

700V

Package Type

TO-252

Series

DN2470

Mount Type

Surface

Pin Count

3

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS-compliant

Length

0.245in

Height

0.94in

Width

0.265 in

Automotive Standard

No

COO (Country of Origin):
CN
The Microchip Low threshold depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

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