Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 450 mA, 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)
- RS-artikelnummer:
- 598-673
- Tillv. art.nr:
- TN0104N8-G
- Tillverkare / varumärke:
- Microchip
Antal (1 rulle med 2000 enheter)*
21 576,00 kr
(exkl. moms)
26 970,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 04 februari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2000 + | 10,788 kr | 21 576,00 kr |
*vägledande pris
- RS-artikelnummer:
- 598-673
- Tillv. art.nr:
- TN0104N8-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | N-Channel Vertical DMOS FET | |
| Maximum Continuous Drain Current Id | 450mA | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-92-3 (TO-226AA) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement Mode | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.2 mm | |
| Length | 4.2mm | |
| Height | 5.3mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Product Type Single MOSFETs | ||
Channel Type N-Channel Vertical DMOS FET | ||
Maximum Continuous Drain Current Id 450mA | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-92-3 (TO-226AA) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement Mode | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.2 mm | ||
Length 4.2mm | ||
Height 5.3mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Microchip N Channel Enhancement-Mode Vertical low-threshold transistor is built using a vertical DMOS structure and a well-established silicon-gate manufacturing process. This design combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. Like all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
relaterade länkar
- Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)
- Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs 90 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)
- DiodesZetex ZVNL110A Type N-Channel Vertical DMOS FET 100 V Enhancement, 3-Pin TO-92 ZVNL110A
- Microchip N-Channel DMOS FET-Channel Single MOSFETs 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3)
- Microchip N-Channel DMOS FET-Channel Single MOSFETs 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN2535N5-G
- Microchip N-Channel DMOS FET-Channel Single MOSFETs 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN3765K4-G
- Microchip N-Channel DMOS FET-Channel Single MOSFETs 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN2530N8-G
- Microchip N-Channel DMOS FET-Channel Single MOSFETs 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN2450K4-G