Infineon Typ N Kanal, MOSFET, 180 A 100 V Förbättring, 3 Ben, TO-220, HEXFET

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RS-artikelnummer:
495-578
Tillv. art.nr:
IRFB4110PBF
Tillverkare / varumärke:
Infineon
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Varumärke

Infineon

Produkttyp

MOSFET

Kanaltyp

Typ N

Maximal kontinuerlig dräneringsström Id

180A

Maximal källspänning för dränering Vds

100V

Kapseltyp

TO-220

Serie

HEXFET

Fästetyp

Genomgående hål

Antal ben

3

Maximal drain-källresistans Rds

5mΩ

Kanalläge

Förbättring

Maximal effektförlust Pd

370W

Minsta arbetsstemperatur

-55°C

Maximal spänning för grindkälla Vgs

20 V

Typisk grindladdning Qg @ Vgs

150nC

Framåtriktad spänning Vf

1.3V

Maximal arbetstemperatur

175°C

Höjd

9.02mm

Längd

10.66mm

Bredd

4.82 mm

Standarder/godkännanden

No

Fordonsstandard

Nej

Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 370W Maximum Power Dissipation - IRFB4110PBF


This MOSFET serves as an efficient power transistor tailored for applications in automation, electronics, and electrical industries. Its robust construction and precise specifications provide a versatile solution for applications where efficiency and reliability are essential. With an enhancement mode design and an N-channel configuration, it is suitable for high-speed switching operations.

Features & Benefits


• Maximum continuous drain current of 180A supports high performance

• Drain-to-source voltage range of 100V allows for a variety of applications

• Low RDS(on) of 4.5mΩ reduces power loss and enhances efficiency

• Power dissipation capability of up to 370W ensures stability

• Improved thermal characteristics foster reliability in extreme conditions

• Full characterisation on avalanche and dynamic dv/dt ruggedness promotes durability

Applications


• Employed in high-efficiency synchronous rectification for power supplies

• Suitable for uninterruptible power supply systems

• Ideal for high-speed power switching circuits

• Applicable in hard switched and high frequency circuits

What is the suitable operating temperature range for optimal performance?


It operates effectively within -55°C to +175°C, ensuring functionality across various environments.

How does the MOSFET minimise energy loss in circuits?


The low RDS(on) of 4.5mΩ significantly cuts conduction losses, allowing for efficient operation in power electronics.

Can it be used in high-frequency applications?


Yes, its design facilitates high-speed switching, making it appropriate for applications requiring rapid on-off transitions.

What are the thermal resistance values for proper mounting?


The junction-to-case thermal resistance is 0.402°C/W, while the case-to-sink resistance is 0.50°C/W, enabling effective heat dissipation.

What avalanche characteristics should be considered during usage?


It supports single pulse avalanche energy ratings, providing protection against transient voltage spikes and ensuring reliability in circuit design.

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