Infineon Typ N Kanal, MOSFET, 180 A 100 V Förbättring, 3 Ben, TO-263, HEXFET

RS-artikelnummer:: 168-6012
Tillv. art.nr:: IRFS4010TRLPBF
Tillverkare / varumärke:: Infineon

Infineon Typ N Kanal, MOSFET, 180 A 100 V Förbättring, 3 Ben, TO-263, HEXFET

Antal (1 rulle med 800 enheter)*

9 870,40 kr

(exkl. moms)

12 337,60 kr

(inkl. moms)

Lagerinformation är för närvarande otillgänglig - kom tillbaka senare

Enheter	Per enhet	Per rulle*
800 +	12,338 kr	9 870,40 kr

*vägledande pris

RS-artikelnummer:: 168-6012
Tillv. art.nr:: IRFS4010TRLPBF
Tillverkare / varumärke:: Infineon

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Välj alla	Attribut	Värde
	Varumärke	Infineon
	Kanaltyp	Typ N
	Produkttyp	MOSFET
	Maximal kontinuerlig dräneringsström Id	180A
	Maximal källspänning för dränering Vds	100V
	Kapseltyp	TO-263
	Serie	HEXFET
	Typ av fäste	Yta
	Antal ben	3
	Maximal drain-källresistans Rds	4.7mΩ
	Kanalläge	Förbättring
	Maximal effektförlust Pd	375W
	Typisk grindladdning Qg @ Vgs	143nC
	Framåtriktad spänning Vf	1.3V
	Minsta arbetsstemperatur	-55°C
	Maximal arbetstemperatur	175°C
	Höjd	4.83mm
	Längd	10.67mm
	Standarder/godkännanden	No
	Fordonsstandard	Nej

	Välj alla
	Varumärke Infineon
	Kanaltyp Typ N
	Produkttyp MOSFET
	Maximal kontinuerlig dräneringsström Id 180A
	Maximal källspänning för dränering Vds 100V
	Kapseltyp TO-263
	Serie HEXFET
	Typ av fäste Yta
	Antal ben 3
	Maximal drain-källresistans Rds 4.7mΩ
	Kanalläge Förbättring
	Maximal effektförlust Pd 375W
	Typisk grindladdning Qg @ Vgs 143nC
	Framåtriktad spänning Vf 1.3V
	Minsta arbetsstemperatur -55°C
	Maximal arbetstemperatur 175°C
	Höjd 4.83mm
	Längd 10.67mm
	Standarder/godkännanden No
	Fordonsstandard Nej

Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 375W Maximum Power Dissipation - IRFS4010TRLPBF

This high-power MOSFET delivers strong performance across various applications, essential for contemporary electronic systems. Its enhancement mode operation and advanced HEXFET technology provide efficient power management, making it suitable for applications that require dependable power control.

Features & Benefits

• Supports continuous drain current up to 180A for substantial loads

• Maximum drain-source voltage rated at 100V for flexibility

• Low Rds(on) of 4.7mΩ minimises power loss during operation

• Designed in a single configuration for easier integration

• Handles temperatures up to +175°C effectively

• Capable of high-speed power switching for efficient operations

Applications

• Used in synchronous rectification for switched-mode power supplies

• Suitable for uninterruptible power supply systems

• Applied in hard-switched and high-frequency circuits

• Utilised in automation equipment that needs efficient power management

• Integrates well into diverse electrical and mechanical projects

How does the resistance affect performance in high-frequency applications?

A low Rds(on) notably reduces heat generation and power loss, enhancing the efficiency of high-frequency power converters.

What gate voltage is required to ensure optimal operation?

The device operates effectively with a gate-source voltage between 2V and 4V, with 10V recommended for maximum efficiency.

Is installation straightforward for this component?

Yes, this surface mount MOSFET is designed for easy placement on PCBs, allowing for quick and reliable setups in various devices.

Can it handle thermal management effectively?

With a maximum operating junction temperature of +175°C, it is suitable for use in environments that require solid thermal performance.

What types of circuits can benefit from incorporating this component?

It is ideal for high-speed switching applications, load driver circuits, and power management systems in automation and electrical fields.