onsemi BSS84L Type P-Channel MOSFET, 130 mA, 50 V Enhancement, 3-Pin SOT-23 BSS84LT1G
- RS-artikelnummer:
- 463-329
- Tillv. art.nr:
- BSS84LT1G
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 100 enheter)*
91,40 kr
(exkl. moms)
114,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 100 enhet(er) från den 29 december 2025
- Dessutom levereras 26 900 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 100 - 400 | 0,914 kr | 91,40 kr |
| 500 - 900 | 0,787 kr | 78,70 kr |
| 1000 + | 0,683 kr | 68,30 kr |
*vägledande pris
- RS-artikelnummer:
- 463-329
- Tillv. art.nr:
- BSS84LT1G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 130mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | BSS84L | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.2nC | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 225mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Height | 0.94mm | |
| Width | 1.3 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 130mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Series BSS84L | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.2nC | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 225mW | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Height 0.94mm | ||
Width 1.3 mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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