Infineon IMW65 Type N-Channel MOSFET, 32.8 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R060M2HXKSA1

Mängdrabatt möjlig

Antal (1 enhet)*

92,52 kr

(exkl. moms)

115,65 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • 235 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
1 - 992,52 kr
10 - 9983,22 kr
100 - 49976,72 kr
500 - 99971,23 kr
1000 +63,84 kr

*vägledande pris

RS-artikelnummer:
351-867
Tillv. art.nr:
IMW65R060M2HXKSA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

32.8A

Output Power

130W

Maximum Drain Source Voltage Vds

650V

Package Type

PG-TO-247

Series

IMW65

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

16.3mm

Standards/Approvals

JEDEC

Width

21.5 mm

Height

5.3mm

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon CoolSiC MOSFET 650 V, 60 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Excellent figures of merit (FOMs)

Best in class RDS(on)

High robustness and overall quality

Flexible driving voltage range

Support for unipolar driving (VGSoff=0)

Best immunity against turn-on effects

Improved package interconnect with .XT

relaterade länkar