Infineon IMW65 Type N-Channel MOSFET, 53 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R033M2HXKSA1
- RS-artikelnummer:
- 351-865
- Tillv. art.nr:
- IMW65R033M2HXKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
146,97 kr
(exkl. moms)
183,71 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 240 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 9 | 146,97 kr |
| 10 - 99 | 132,27 kr |
| 100 + | 121,97 kr |
*vägledande pris
- RS-artikelnummer:
- 351-865
- Tillv. art.nr:
- IMW65R033M2HXKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 53A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Output Power | 194W | |
| Package Type | PG-TO-247 | |
| Series | IMW65 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Width | 21.5 mm | |
| Length | 16.3mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 53A | ||
Maximum Drain Source Voltage Vds 650V | ||
Output Power 194W | ||
Package Type PG-TO-247 | ||
Series IMW65 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Width 21.5 mm | ||
Length 16.3mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC MOSFET 650 V, 33 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Excellent figures of merit (FOMs)
Best in class RDS(on)
High robustness and overall quality
Flexible driving voltage range
Support for unipolar driving (VGSoff=0)
Best immunity against turn-on effects
Improved package interconnect with .XT
relaterade länkar
- Infineon IMW65 Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IMW65R026M2HXKSA1
- Infineon IMW65 Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IMW65R010M2HXKSA1
- Infineon IMW65 Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IMW65R060M2HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247 IMZA65R030M1HXKSA1
- Infineon IMZA65 Type N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R033M2HXKSA1
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247