Infineon OptiMOS 5 Type N-Channel Power MOSFET, 55 A, 150 V Enhancement, 8-Pin PG-TDSON-8 BSC152N15LS5ATMA1
- RS-artikelnummer:
- 349-398
- Tillv. art.nr:
- BSC152N15LS5ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
91,13 kr
(exkl. moms)
113,91 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 5 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 18,226 kr | 91,13 kr |
| 50 - 95 | 17,292 kr | 86,46 kr |
| 100 - 495 | 16,038 kr | 80,19 kr |
| 500 - 995 | 14,762 kr | 73,81 kr |
| 1000 + | 14,202 kr | 71,01 kr |
*vägledande pris
- RS-artikelnummer:
- 349-398
- Tillv. art.nr:
- BSC152N15LS5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PG-TDSON-8 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 96W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PG-TDSON-8 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 96W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 5 power MOSFET logic level 150 V family offers the same excellent performance of the OptiMOS 5 150 V products with the capability of operating with just 4.5 V of Vgs. Its features an improved thermal management and less system complexity.
Very low switching losses
Tailored to SR that provide 5 V
Highly efficient designs
relaterade länkar
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 ISC16DP15LMATMA1
- Infineon OptiMOS 5 Type N-Channel Power MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 BSC105N15LS5ATMA1
- Infineon OptiMOS 5 Type N-Channel Power MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 BSC088N15LS5ATMA1
- Infineon Dual OptiMOS Type N-Channel MOSFET 55 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TDSON-8-43 IAUCN08S7N019ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN08S7N034ATMA1
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TDSON-8-61 IAUCN10S5L280DATMA1