Infineon OptiMOS 5 Type N-Channel Power MOSFET, 76 A, 150 V Enhancement, 8-Pin PG-TDSON-8 BSC105N15LS5ATMA1
- RS-artikelnummer:
- 349-397
- Tillv. art.nr:
- BSC105N15LS5ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
133,36 kr
(exkl. moms)
166,70 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 06 juli 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 26,672 kr | 133,36 kr |
| 50 - 95 | 25,334 kr | 126,67 kr |
| 100 - 495 | 23,43 kr | 117,15 kr |
| 500 - 995 | 21,594 kr | 107,97 kr |
| 1000 + | 20,788 kr | 103,94 kr |
*vägledande pris
- RS-artikelnummer:
- 349-397
- Tillv. art.nr:
- BSC105N15LS5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 5 | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 5 | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 5 power MOSFET logic level 150 V family offers the same excellent performance of the OptiMOS 5 150 V products with the capability of operating with just 4.5 V of Vgs. Its features an improved thermal management and less system complexity.
Very low switching losses
Tailored to SR that provide 5 V
Highly efficient designs
relaterade länkar
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 ISC16DP15LMATMA1
- Infineon OptiMOS 5 Type N-Channel Power MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 BSC088N15LS5ATMA1
- Infineon OptiMOS 5 Type N-Channel Power MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 BSC152N15LS5ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TDSON-8-43 IAUCN08S7N019ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN08S7N034ATMA1
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TDSON-8-61 IAUCN10S5L280DATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-33 IAUCN04S7N020ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-61 IAUCN04S7L053DATMA1
