Infineon OptiMOS-TM5 Type N-Channel MOSFET, 275 A, 60 V Enhancement, 8-Pin PG-TDSON-8 FL ISC025N08NM5LF2ATMA1

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RS-artikelnummer:
348-846
Tillv. art.nr:
ISC025N08NM5LF2ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

275A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TDSON-8 FL

Series

OptiMOS-TM5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.55mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

217W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon 60 V OptiMOS 5 Linear FET in a PQFN 5x6 mm (SuperSO8) package, offering the industry’s lowest on-state resistance RDS(on) and wide safe operating area (SOA) at 25˚C and 125˚C. The OptiMOS Linear FET is a revolutionary approach that solves the trade off between on-state resistance and linear mode capability.

High inrush current enabled

Fast start up and shorter down time

Industry standard footprint

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