Infineon IPT Type N-Channel Power Transistor, 70 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R037CM8XTMA1

RS-artikelnummer:: 349-258
Tillv. art.nr:: IPT60R037CM8XTMA1
Tillverkare / varumärke:: Infineon

Infineon IPT Type N-Channel Power Transistor, 70 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R037CM8XTMA1

Mängdrabatt möjlig

Antal (1 förpackning med 2 enheter)*

159,31 kr

(exkl. moms)

199,138 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Tillfälligt slut

2 000 enhet(er) levereras från den 29 december 2025

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet	Per förpackning*
2 - 18	79,655 kr	159,31 kr
20 - 198	71,68 kr	143,36 kr
200 +	66,135 kr	132,27 kr

*vägledande pris

RS-artikelnummer:: 349-258
Tillv. art.nr:: IPT60R037CM8XTMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	600V
	Series	IPT
	Package Type	PG-HSOF-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	37mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	79nC
	Maximum Power Dissipation Pd	390W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 600V
	Series IPT
	Package Type PG-HSOF-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 37mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 79nC
	Maximum Power Dissipation Pd 390W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IPT60R037CM8XTMA1

COO (Country of Origin):: MY

The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.

Suitable for hard and soft switching topologies

Ease of use and fast design in through low ringing tendency

Simplified thermal management thanks to our advanced die attach technique

Suitable for a wide variety of applications and power ranges

Increased power density solutions enabled by using products with smaller footprint

Infineon IPT Type N-Channel Power Transistor, 70 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R037CM8XTMA1

GRATIS leverans för online beställningar över 500,00 kr

relaterade länkar