Infineon IPT Type N-Channel Power Transistor, 212 A, 135 V Enhancement, 8-Pin PG-HSOG-8 IPTG029N13NM6ATMA1
- RS-artikelnummer:
- 349-137
- Tillv. art.nr:
- IPTG029N13NM6ATMA1
- Tillverkare / varumärke:
- Infineon
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Antal (1 enhet)*
82,48 kr
(exkl. moms)
103,10 kr
(inkl. moms)
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- Dessutom levereras 1 800 enhet(er) från den 29 december 2025
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 82,48 kr |
| 10 - 99 | 74,14 kr |
| 100 - 499 | 68,54 kr |
| 500 - 999 | 63,62 kr |
| 1000 + | 56,90 kr |
*vägledande pris
- RS-artikelnummer:
- 349-137
- Tillv. art.nr:
- IPTG029N13NM6ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Series | IPT | |
| Package Type | PG-HSOG-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 104nC | |
| Maximum Power Dissipation Pd | 294W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD-020, RoHS, IEC61249-2-21 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 135V | ||
Series IPT | ||
Package Type PG-HSOG-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 104nC | ||
Maximum Power Dissipation Pd 294W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD-020, RoHS, IEC61249-2-21 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 135 V is an N-channel, normal level MOSFET designed to deliver high efficiency performance in power applications. It features very low on-resistance (RDS(on)), which minimizes conduction losses for greater energy efficiency. With an excellent gate charge x RDS(on) product (FOM), it ensures optimal switching performance. The MOSFET also offers very low reverse recovery charge (Qrr), improving switching efficiency. Additionally, it is 100% avalanche tested for reliability and can operate at 175°C, making it suitable for high temperature and demanding environments.
Optimized for motor drives and battery powered applications
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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