Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	45A
	Maximum Drain Source Voltage Vds	1700V
	Package Type	TO-247-4L
	Series	EliteSiC
	Pin Count	4
	Maximum Drain Source Resistance Rds	76mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	4.3V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	105nC
	Maximum Power Dissipation Pd	333W
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	Pb-Free and RoHS
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 45A
	Maximum Drain Source Voltage Vds 1700V
	Package Type TO-247-4L
	Series EliteSiC
	Pin Count 4
	Maximum Drain Source Resistance Rds 76mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 4.3V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 105nC
	Maximum Power Dissipation Pd 333W
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Operating Temperature 175°C
	Standards/Approvals Pb-Free and RoHS
	Automotive Standard No

Datasheet - NVH4L050N170M1

COO (Country of Origin):: CN

The ON Semiconductor High-voltage power MOSFET designed for efficient switching applications, ensuring low conduction losses and reliable operation. Its advanced packaging provides excellent thermal performance, making it suitable for demanding environments. This device offers enhanced power handling capabilities with optimized electrical characteristics.

TO 247 4L package

RoHS compliant

Pb free

onsemi EliteSiC Type N-Channel MOSFET, 45 A, 1700 V Enhancement, 4-Pin TO-247-4L NVH4L050N170M1

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