STMicroelectronics STL Type N-Channel MOSFET, 158 A, 100 V, 8-Pin PowerFLAT STL165N10F8AG
- RS-artikelnummer:
- 330-476
- Tillv. art.nr:
- STL165N10F8AG
- Tillverkare / varumärke:
- STMicroelectronics
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32,70 kr
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40,88 kr
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 32,70 kr |
| 10 - 99 | 29,46 kr |
| 100 - 499 | 27,10 kr |
| 500 - 999 | 25,31 kr |
| 1000 + | 22,40 kr |
*vägledande pris
- RS-artikelnummer:
- 330-476
- Tillv. art.nr:
- STL165N10F8AG
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 158A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | STL | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Maximum Power Dissipation Pd | 167W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 6.4mm | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 158A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series STL | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Maximum Power Dissipation Pd 167W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 6.4mm | ||
Width 5.2 mm | ||
Automotive Standard No | ||
RoHS-status: Undantagen
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel enhancement mode Power MOSFET designed in STripFET F8 technology, featuring an enhanced trench gate structure. It delivers a state-of-the-art figure of merit with very low on-state resistance, reduced internal capacitances, and gate charge, enabling faster and more efficient switching.
100% avalanche tested
Low gate charge Qg
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