STMicroelectronics STL Type N-Channel N-Channel Mosfet, 154 A, 40 V, 8-Pin PowerFLAT STL160N4F8
- RS-artikelnummer:
- 330-475
- Tillv. art.nr:
- STL160N4F8
- Tillverkare / varumärke:
- STMicroelectronics
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13,89 kr
(exkl. moms)
17,36 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 13,89 kr |
| 10 - 99 | 12,54 kr |
| 100 - 499 | 11,42 kr |
| 500 - 999 | 10,75 kr |
| 1000 + | 9,52 kr |
*vägledande pris
- RS-artikelnummer:
- 330-475
- Tillv. art.nr:
- STL160N4F8
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | N-Channel Mosfet | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 154A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | STL | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 111W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type N-Channel Mosfet | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 154A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series STL | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 111W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
RoHS-status: Undantagen
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel enhancement mode Power MOSFET designed in STripFET F8 technology, featuring an enhanced trench gate structure. It delivers a state-of-the-art figure of merit with very low on-state resistance, reduced internal capacitances, and gate charge, enabling faster and more efficient switching.
100% avalanche tested
Low gate charge Qg
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