STMicroelectronics SCT0 MOSFET, 90 A, 1200 V HU3PAK SCT019H120G3AG

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288,96 kr

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361,20 kr

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Förpackningsalternativ:
RS-artikelnummer:
330-318
Tillv. art.nr:
SCT019H120G3AG
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

1200V

Series

SCT0

Package Type

HU3PAK

Maximum Drain Source Resistance Rds

18.5mΩ

Maximum Power Dissipation Pd

555W

Typical Gate Charge Qg @ Vgs

28nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

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