STMicroelectronics SCT0 Power MOSFET, 60 A, 650 V, 7-Pin HU3PAK SCT027HU65G3AG

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170,91 kr

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213,64 kr

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Förpackningsalternativ:
RS-artikelnummer:
330-233
Tillv. art.nr:
SCT027HU65G3AG
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Series

SCT0

Package Type

HU3PAK

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

29mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

300W

Typical Gate Charge Qg @ Vgs

60.4nC

Maximum Operating Temperature

175°C

Length

18.58mm

Width

14 mm

Standards/Approvals

RoHS

Height

3.5mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
JP
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

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