STMicroelectronics SCT Type N-Channel Power MOSFET, 30 A, 1200 V Enhancement, 7-Pin HU3PAK SCT070HU120G3AG

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RS-artikelnummer:
215-241
Tillv. art.nr:
SCT070HU120G3AG
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Package Type

HU3PAK

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

23W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

37nC

Maximum Operating Temperature

175°C

Width

14 mm

Length

18.58mm

Height

3.5mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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