Infineon HEXFET Type P-Channel MOSFET, 4.3 A, 12 V Enhancement, 3-Pin Micro IRLML6401TRPBF

RS-artikelnummer:: 301-316
Tillv. art.nr:: IRLML6401TRPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 4.3 A, 12 V Enhancement, 3-Pin Micro IRLML6401TRPBF

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RS-artikelnummer:: 301-316
Tillv. art.nr:: IRLML6401TRPBF
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	4.3A
	Maximum Drain Source Voltage Vds	12V
	Package Type	Micro
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	50mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.3W
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	8 V
	Typical Gate Charge Qg @ Vgs	10nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	1.4 mm
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 4.3A
	Maximum Drain Source Voltage Vds 12V
	Package Type Micro
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 50mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.3W
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 8 V
	Typical Gate Charge Qg @ Vgs 10nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 1.4 mm
	Length 3.04mm
	Height 1.02mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 4.3A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML6401TRPBF

This P-Channel MOSFET is designed for efficiency, making it suitable for applications that demand effective power management. Utilising HEXFET technology, it provides low on-resistance, resulting in reduced power loss during operation. The robust design enables it to endure high temperatures, making it suitable for environments where performance is essential.

Features & Benefits

• Advanced processing for very low on-resistance

• Maximum drain source voltage of 12V

• Continuous drain current capability of 4.3A

• Junction temperature tolerance up to 150°C

• Optimised for fast switching applications, enhancing efficiency

• Compact SOT-23 package for space-efficient circuit designs

Applications

• Battery and load management systems

• Portable electronics where low-profile components are required

• Power management solutions in PCMCIA cards

• Automation systems that require dependable switching

• Electronic circuits needing a compact surface mount design

What is the impact of higher temperatures on performance?

Higher temperatures can increase the on-resistance, potentially reducing efficiency. The device operates safely up to 150°C, maintaining functionality under challenging conditions.

How does the gate threshold voltage affect operation?

The gate threshold voltage, between 0.4V and 0.95V, indicates the minimum voltage necessary to activate the device. Staying within this range ensures effective load switching.

Is this product suited for fast-switching applications?

Yes, the MOSFET facilitates quick transitions between on and off states, reducing energy loss and enhancing circuit responsiveness.

What precautions should be taken during installation?

It’s advisable to use a suitable heat sink when operating near the maximum current rating to prevent overheating. Proper soldering techniques are recommended due to its surface mount design.

Can this device be used for high-power applications?

The device can continuously manage 4.3A; however, evaluating the specific application's power requirements and thermal management is essential for optimal performance.