Infineon OptiMOS Type N-Channel MOSFET, 447 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1
- RS-artikelnummer:
- 284-945
- Tillv. art.nr:
- IQDH88N06LM5CGATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
84,67 kr
(exkl. moms)
105,838 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 42,335 kr | 84,67 kr |
| 20 - 198 | 38,135 kr | 76,27 kr |
| 200 - 998 | 35,17 kr | 70,34 kr |
| 1000 - 1998 | 32,59 kr | 65,18 kr |
| 2000 + | 29,175 kr | 58,35 kr |
*vägledande pris
- RS-artikelnummer:
- 284-945
- Tillv. art.nr:
- IQDH88N06LM5CGATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 447A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | PG-TTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.86mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 333W | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 447A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type PG-TTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.86mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 333W | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is a high performance N channel MOSFET designed to provide exceptional efficiency and reliability for industrial applications. Utilising Advanced semiconductor technology, this component delivers superior thermal management and low on resistance, making it Ideal for power conversion solutions. With its high avalanche energy rating and rigorous validation against JEDEC standards, you can Trust this product to meet stringent operational demands while maintaining safety and durability.
Optimised thermal resistance for cooling
Qualified for industrial reliability
Pb free lead plating for eco friendliness
Low gate drive requirements simplify circuits
Robust design for high drain currents
100% avalanche tested for reliability
Compact package for easy integration
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