Infineon OptiMOS Type N-Channel MOSFET, 610 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1

RS-artikelnummer:: 284-926
Tillv. art.nr:: IQD005N04NM6CGATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 610 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1

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Antal (1 förpackning med 2 enheter)*

83,06 kr

(exkl. moms)

103,82 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Enheter	Per enhet	Per förpackning*
2 - 18	41,53 kr	83,06 kr
20 - 198	37,35 kr	74,70 kr
200 - 998	34,495 kr	68,99 kr
1000 - 1998	31,975 kr	63,95 kr
2000 +	28,67 kr	57,34 kr

*vägledande pris

RS-artikelnummer:: 284-926
Tillv. art.nr:: IQD005N04NM6CGATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	610A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS
	Package Type	PG-TTFN-9
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	0.47mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	333W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	129nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, IEC61249-2-21, JEDEC
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 610A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS
	Package Type PG-TTFN-9
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 0.47mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 333W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 129nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, IEC61249-2-21, JEDEC
	Automotive Standard No

Datasheet - IQD005N04NM6CGATMA1

The Infineon MOSFET features an OptiMOS 6 Power Transistor combines exceptional performance with robust reliability, making it a TOP choice for demanding applications. This N channel MOSFET is designed for industrial environments, providing a maximum drain source voltage of 40V and an impressive continuous drain current rating of up to 610A. This semiconductor device excels in thermal management, making it Ideal for high temperature and high power settings, facilitating a longer lifespan and consistent performance under load. With a commitment to eco friendliness, it is RoHS compliant and halogen free, aligning with modern environmental standards while offering superior engineering quality.

Outstanding thermal resistance for reliability

Robust performance in high stress environments

100% avalanche tested for safety

Exceptional efficiency for power management

Complies with environmental regulations

Minimal switching losses for high frequency operations

Compact design reduces PCB space

Easy integration into industrial systems

Infineon OptiMOS Type N-Channel MOSFET, 610 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1

GRATIS leverans för online beställningar över 500,00 kr

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