Infineon OptiMOS Type N-Channel MOSFET, 789 A, 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH35N03LM5CGATMA1

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RS-artikelnummer:
284-941
Tillv. art.nr:
IQDH35N03LM5CGATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

789A

Maximum Drain Source Voltage Vds

25V

Series

OptiMOS

Package Type

PG-TTFN-9

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

0.29mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

278W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET features an OptiMOS 5 Power Transistor exemplifies cutting edge technology in MOSFET performance, designed primarily for high efficiency switching applications. This transistor operates at a voltage of 25V and is tailored for unparalleled thermal management and low on resistance, ensuring superior efficiency in demanding environments. Manufactured with Advanced materials and adhering to the highest industry standards, it stands out for its capability to handle high current loads while maintaining low energy loss. The unique design supports robust thermal resistance, facilitating effective heat dissipation, even in Compact layouts.

N channel technology for fast switching

Low on resistance reduces energy losses

Superior thermal resistance for reliability

Fully qualified for industrial durability

Avalanche tested for consistent performance

Pb free plating supports sustainability

Halogen free construction meets safety standards

Compact design for easy integration

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