Infineon OptiMOS Type N-Channel MOSFET, 610 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1
- RS-artikelnummer:
- 284-925
- Tillv. art.nr:
- IQD005N04NM6CGATMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 5000 enheter)*
136 755,00 kr
(exkl. moms)
170 945,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 30 mars 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 5000 + | 27,351 kr | 136 755,00 kr |
*vägledande pris
- RS-artikelnummer:
- 284-925
- Tillv. art.nr:
- IQD005N04NM6CGATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 610A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-TTFN-9 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.47mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 333W | |
| Typical Gate Charge Qg @ Vgs | 129nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 610A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-TTFN-9 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.47mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 333W | ||
Typical Gate Charge Qg @ Vgs 129nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 6 Power Transistor combines exceptional performance with robust reliability, making it a TOP choice for demanding applications. This N channel MOSFET is designed for industrial environments, providing a maximum drain source voltage of 40V and an impressive continuous drain current rating of up to 610A. This semiconductor device excels in thermal management, making it Ideal for high temperature and high power settings, facilitating a longer lifespan and consistent performance under load. With a commitment to eco friendliness, it is RoHS compliant and halogen free, aligning with modern environmental standards while offering superior engineering quality.
Outstanding thermal resistance for reliability
Robust performance in high stress environments
100% avalanche tested for safety
Exceptional efficiency for power management
Complies with environmental regulations
Minimal switching losses for high frequency operations
Compact design reduces PCB space
Easy integration into industrial systems
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