Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1

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117 168,00 kr

(exkl. moms)

146 460,00 kr

(inkl. moms)

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6000 +19,528 kr117 168,00 kr

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RS-artikelnummer:
284-770
Tillv. art.nr:
IQE050N08NM5CGSCATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

99A

Maximum Drain Source Voltage Vds

80V

Package Type

PG-WHTFN-9

Series

OptiMOS

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

5.0mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

100W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET features an power transistor is an exemplary choice for applications requiring high efficiency and reliability. Optimised for synchronous rectification, this N channel device is part of the OptiMOS 5 series, renowned for its robust thermal performance and low on resistance. The device operates effectively at voltages of up to 80V, making it suitable for a wide range of industrial applications. With features such as 100% avalanche testing and a Pb free design compliant with RoHS standards, this product embodies both safety and sustainability in its manufacturing process. Its small footprint and high performance manifest in the Advanced design that ensures superior thermal characteristics, presenting an excellent option for designers aiming to improve overall system efficiency.

Optimised for synchronous rectification

N channel for easy circuit integration

Low on resistance reduces power losses

Robust thermal resistance for reliability

Avalanche tested for extreme conditions

Pb free lead plating for safety

Halogen free construction meets IEC standards

Qualified per JEDEC industry standards

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