Infineon OptiMOS 5 N-Channel MOSFET, 323 A, 80 V, 9-Pin PG-WHTFN-9 IQD016N08NM5CGSCATMA1

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RS-artikelnummer:
348-883
Tillv. art.nr:
IQD016N08NM5CGSCATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

323 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS 5

Package Type

PG-WHTFN-9

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
MY
The Infineon Power MOSFET comes with a low RDS(on) of 1,57 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.

Minimized conduction losses
Fast switching
Reduced voltage overshoot

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