Infineon OptiMOS Type N-Channel MOSFET, 510 A, 60 V Enhancement, 8-Pin PG-HSOF-8-1 IAUTN06S5N008ATMA1

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RS-artikelnummer:
284-701
Tillv. art.nr:
IAUTN06S5N008ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

510A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-HSOF-8-1

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.76mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

358W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon OptiMOS 5 automotive power MOSFET is engineered for high performance applications in the automotive sector, delivering exceptional efficiency and reliability. Designed as a robust N channel enhancement mode device, it guarantees superior functionality with enhanced electrical testing that meets rigorous industry standards. This innovative component reigns supreme in automotive power management, offering a Compact design that seamlessly integrates into diverse automotive systems. With a remarkable operating temperature range and compliance with AEC Q101, it ensures consistent performance even under challenging environmental conditions.

Robust design enhances dependability

Exceeds standard industry qualifications

Effective thermal resistance for heat management

100% avalanche testing ensures durability

RoHS compliant for eco friendly use

Handles high continuous drain currents

Advanced gate charge for Rapid switching

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