Nexperia NextPowerS3 Type N-Channel MOSFET, 250 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R2-30YLDX

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22 972,50 kr

(exkl. moms)

28 716,00 kr

(inkl. moms)

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1500 +15,315 kr22 972,50 kr

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RS-artikelnummer:
219-341
Tillv. art.nr:
PSMN1R2-30YLDX
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

250A

Maximum Drain Source Voltage Vds

30V

Series

NextPowerS3

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

32nC

Maximum Power Dissipation Pd

194W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

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