STMicroelectronics SCT060HU Type N-Channel MOSFET, 30 A, 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG

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Förpackningsalternativ:
RS-artikelnummer:
152-111
Tillv. art.nr:
SCT060HU75G3AG
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

750V

Package Type

HU3PAK

Series

SCT060HU

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

58mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±18 V

Forward Voltage Vf

3V

Typical Gate Charge Qg @ Vgs

29nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

14.1mm

Width

19 mm

Height

3.6mm

Automotive Standard

No

COO (Country of Origin):
JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

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