STMicroelectronics SuperMESH Dual N-Channel MOSFET, 0.4 A, 450 V Enhancement, 8-Pin SO-8 STS1DNC45

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172,03 kr

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Förpackningsalternativ:
RS-artikelnummer:
151-447
Tillv. art.nr:
STS1DNC45
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Dual N

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.4A

Maximum Drain Source Voltage Vds

450V

Series

SuperMESH

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.5Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10nC

Minimum Operating Temperature

-65°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Standard outline for easy automated surface mount assembly

Gate charge minimized

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