Infineon Typ N Kanal, MOSFET, 28 A 55 V Förbättring, 3 Ben, TO-252, HEXFET

RS-artikelnummer:: 913-4809
Tillv. art.nr:: IRLR2705TRPBF
Tillverkare / varumärke:: Infineon

Infineon Typ N Kanal, MOSFET, 28 A 55 V Förbättring, 3 Ben, TO-252, HEXFET

Mängdrabatt möjlig

Antal (1 rulle med 2000 enheter)*

5 538,00 kr

(exkl. moms)

6 922,00 kr

(inkl. moms)

Lagerinformation är för närvarande otillgänglig - kom tillbaka senare

Enheter	Per enhet	Per rulle*
2000 - 2000	2,769 kr	5 538,00 kr
4000 - 4000	2,63 kr	5 260,00 kr
6000 +	2,464 kr	4 928,00 kr

*vägledande pris

RS-artikelnummer:: 913-4809
Tillv. art.nr:: IRLR2705TRPBF
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Varumärke	Infineon
	Produkttyp	MOSFET
	Kanaltyp	Typ N
	Maximal kontinuerlig dräneringsström Id	28A
	Maximal källspänning för dränering Vds	55V
	Serie	HEXFET
	Kapseltyp	TO-252
	Typ av fäste	Yta
	Antal ben	3
	Maximal drain-källresistans Rds	65mΩ
	Kanalläge	Förbättring
	Framåtriktad spänning Vf	1.3V
	Maximal effektförlust Pd	68W
	Minsta arbetsstemperatur	-55°C
	Typisk grindladdning Qg @ Vgs	25nC
	Maximal arbetstemperatur	175°C
	Standarder/godkännanden	No
	Höjd	2.39mm
	Längd	6.73mm
	Fordonsstandard	Nej

	Välj alla
	Varumärke Infineon
	Produkttyp MOSFET
	Kanaltyp Typ N
	Maximal kontinuerlig dräneringsström Id 28A
	Maximal källspänning för dränering Vds 55V
	Serie HEXFET
	Kapseltyp TO-252
	Typ av fäste Yta
	Antal ben 3
	Maximal drain-källresistans Rds 65mΩ
	Kanalläge Förbättring
	Framåtriktad spänning Vf 1.3V
	Maximal effektförlust Pd 68W
	Minsta arbetsstemperatur -55°C
	Typisk grindladdning Qg @ Vgs 25nC
	Maximal arbetstemperatur 175°C
	Standarder/godkännanden No
	Höjd 2.39mm
	Längd 6.73mm
	Fordonsstandard Nej

COO (ursprungsland):: CN

Infineon HEXFET Series MOSFET, 28A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLR2705TRPBF

This MOSFET is engineered for outstanding performance across a range of electronic applications. Leveraging modern advancements in MOSFET technology, it plays a significant role in switching applications where efficiency and dependability are essential. Its distinct features make it an excellent option for automation and electrical systems that require high current handling and robust operation.

Features & Benefits

• High continuous drain current of 28A improves performance

• Maximum voltage rating of 55V boosts switching capabilities

• Low on-resistance of 65mΩ minimises energy loss

• Operates effectively at temperatures up to +175°C

• Designed for surface mounting in a DPAK TO-252 package for efficiency

• Single enhancement mode configuration facilitates circuit design

Applications

• Suitable for power management in industrial automation

• Ideal for energy-efficient switching in power supplies

• Commonly utilised in motor control circuits

• Appropriate for use in DC-DC converters

What is the maximum power dissipation for this component?

The maximum power dissipation is 68W, allowing for efficient heat management during operation.

How does the operating temperature range affect usage?

The device operates effectively between -55°C and +175°C, making it suitable for various environmental conditions.

Is there a specific installation method recommended for this MOSFET?

The device is designed for surface mounting using techniques like soldering to ensure reliable connections.

Can this MOSFET be used in parallel with others?

Yes, it can be used in parallel configurations, but proper thermal management is essential to prevent overheating.

What type of gate drive is recommended for optimal performance?

A logic-level gate drive is recommended for efficient switching, ensuring the device operates within its specified threshold levels.