Infineon Typ N Kanal, MOSFET och diod, 7 A 800 V Förbättring, 3 Ben, TO-251, CoolMOS P7

Antal (1 förpackning med 10 enheter)*

114,96 kr

(exkl. moms)

143,70 kr

(inkl. moms)

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  • Dessutom levereras 1 400 enhet(er) från den 27 april 2026
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10 +11,496 kr114,96 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
220-7450
Tillv. art.nr:
IPU80R750P7AKMA1
Tillverkare / varumärke:
Infineon
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Varumärke

Infineon

Produkttyp

MOSFET och diod

Kanaltyp

Typ N

Maximal kontinuerlig dräneringsström Id

7A

Maximal källspänning för dränering Vds

800V

Kapseltyp

TO-251

Serie

CoolMOS P7

Typ av fäste

Genomgående hål

Antal ben

3

Maximal drain-källresistans Rds

750mΩ

Kanalläge

Förbättring

Typisk grindladdning Qg @ Vgs

17nC

Maximal effektförlust Pd

51W

Framåtriktad spänning Vf

0.9V

Minsta arbetsstemperatur

-40°C

Maximal arbetstemperatur

150°C

Längd

6.73mm

Höjd

6.22mm

Standarder/godkännanden

No

Fordonsstandard

Nej

The Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in-class FOM R DS(on) * E oss; reduced Qg, C is and C oss

Best-in-class DPAK R DS(on) of 280mΩ

Best-in-class V (GS)the of 3V and smallest V (GS)the variation of ± 0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to Cool MOS™ C3

Enabling higher power density designs, BOM savings and lower assembly cost

Easy to drive and to design-in

Better production yield by reducing ESD related failures

Less production issues and reduced field returns

Easy to select right parts for fine tuning of designs

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