STMicroelectronics STGP5H60DF IGBT, 10 A 600 V, 3-Pin TO-220, Through Hole
- RS-artikelnummer:
- 906-2808
- Tillv. art.nr:
- STGP5H60DF
- Tillverkare / varumärke:
- STMicroelectronics
120 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Var (i ett paket med 10)
12,51 kr
(exkl. moms)
15,64 kr
(inkl. moms)
| Enheter | Per unit | Per Pack* |
| 10 - 40 | 12,51 kr | 125,10 kr |
| 50 - 90 | 12,155 kr | 121,55 kr |
| 100 - 240 | 11,866 kr | 118,66 kr |
| 250 - 490 | 11,556 kr | 115,56 kr |
| 500 + | 11,245 kr | 112,45 kr |
- RS-artikelnummer:
- 906-2808
- Tillv. art.nr:
- STGP5H60DF
- Tillverkare / varumärke:
- STMicroelectronics
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 10 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 88 W |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 4.6 x 15.75mm |
| Maximum Operating Temperature | +175 °C |
| Energy Rating | 221mJ |
| Gate Capacitance | 855pF |
| Minimum Operating Temperature | -55 °C |