STMicroelectronics STGP10NC60KD IGBT, 20 A 600 V, 3-Pin TO-220, Through Hole
- RS-artikelnummer:
- 168-6468
- Tillv. art.nr:
- STGP10NC60KD
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
489,20 kr
(exkl. moms)
611,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 200 enhet(er) levereras från den 11 mars 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 9,784 kr | 489,20 kr |
| 100 - 200 | 9,529 kr | 476,45 kr |
| 250 - 450 | 9,285 kr | 464,25 kr |
| 500 + | 9,05 kr | 452,50 kr |
*vägledande pris
- RS-artikelnummer:
- 168-6468
- Tillv. art.nr:
- STGP10NC60KD
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
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Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 20 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 4.6 x 9.15mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 20 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 4.6 x 9.15mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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