STMicroelectronics STGP5H60DF IGBT, 10 A 600 V, 3-Pin TO-220, Through Hole

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458,30 kr

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572,90 kr

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50 - 509,166 kr458,30 kr
100 - 2008,709 kr435,45 kr
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500 - 7007,793 kr389,65 kr
750 +7,334 kr366,70 kr

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RS-artikelnummer:
168-8940
Tillv. art.nr:
STGP5H60DF
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

88 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 15.75mm

Maximum Operating Temperature

+175 °C

Energy Rating

221mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

855pF

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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